(PR) Sandisk Announces Sampling of BiCS10 1 Tb TLC 3D NAND Flash Memory
3 July 2026 at 03:25
Sandisk Corporation (Nasdaq: SNDK) today announced it is sampling its BiCS10 1 Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve industry-leading 1 Tb TLC memory density greater than 29 Gb/mm², improving bit density by 59 percent while delivering up to 4.8 Gb/s interface speed, a 33 percent improvement compared with 8th generation 3D flash memory currently in mass production.
Built on Sandisk's proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10 percent for input and 34 percent for output compared to the previous BiCS8 generation.
Built on Sandisk's proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10 percent for input and 34 percent for output compared to the previous BiCS8 generation.
