Samsung is quietly gearing up for the next big step in memory technology. According to recent reports (via @SemiconductorsX), the company is working with partners to introduce equipment for its 7th-generation 10nm-class DRAM, called “1d,” with mass production targeted for late 2027.

Right now, Samsung’s latest is the 1c (6th-gen) process at around 11-12nm. The new 1d shrinks that to about 10-11nm. Smaller lines mean better performance, lower power use, and higher density – exactly what AI systems need.

The company has already been testing samples internally. The current plan is to bring in the new equipment in the first half of 2027 and start real production toward the end of the year.

Why does this matter?

This 1d DRAM is expected to become the core die for HBM5E – Samsung’s high-bandwidth memory planned for 2029. HBM is the super-fast memory that powers AI training and inference in data centers. This stronger manufacturing process will help Samsung remain competitive with SK Hynix in the booming AI memory market.

For everyday users, this new tech will eventually reach phones, laptops, and servers, bringing better speed and lower power use. For the industry, it proves Samsung is still pushing hard on shrinking memory nodes, even as the overall memory market heats up.

It’s a steady, long-term play. No sudden big breakthrough, but these small improvements are exactly what help build real leadership in the AI memory race. We will keep an eye on updates by the end of this year.

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