Samsung promises a greater than 20% performance boost with its HBM4E memory Samsung Electronics has begun shipping its “industry-first” 12-layer HBM4E memory modules to customers, strengthening its position in the next-generation HBM market. This follows Samsung’s HBM4 mass production and commercial shipments earlier this year. HBM4E delivers a stable pin speed of 14 Gbps, with […]

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Samsung has officially expanded its AI memory portfolio with the launch of its new 12-layer HBM4E. The company has also confirmed that it has supplied HBM4E samples to major global companies.

Earlier this year, Samsung launched the HBM4 and announced its mass production. The shipment of HBM4E samples shows that Samsung is further strengthening its leadership in the next-generation HBM market.

HBM4E addresses the rapidly evolving demands of AI computing and hyperscale infrastructure.

Key features of HBM4E AI memory

HBM4E offers a stable pin speed of 14Gbps, with performance scalable up to 16Gbps. This represents over 20 percent increase over its HBM4, while delivering memory bandwidth of up to 3.6 terabytes-per-second (TB/s) per stack.

Samsung says its HBM4E is currently available in 48 GB capacity. The company plans to expand the lineup to include 32GB (8-layer) and 64GB (16-layer) configurations to fulfil the specific demands of its consumers.

HBM4E is made using the world’s most advanced 6th-gen 10nm-class DRAM process (1c), and Samsung Foundry’s 4nm logic base die. This fabrication setup lets the AI memory secure enhanced process stability and manufacturability.

Thanks to the upgrades at the manufacturing level, HBM4E comes with 16 percent improved energy efficiency and 14 percent better thermal resistance. These enhancements also enable more effective heat dissipation.

“Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics.

Samsung plans to begin mass production for HBM4E aligned with customer schedules, following initial sample shipments and optimization.

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FuriosaAI and Broadcom have partnered to build a high-performance AI accelerator chip featuring next-gen HBM4/E memory. FuriosaAI's Next-Gen AI Accelerator Features 2nm Chiplet Architecture, HBM4/E Memory Support for Massive AI Compute Clusters FuriosaAI has announced its third-generation AI accelerator, which builds upon its 2nd Generation RNGD platform, which is currently in mass production on TSMC's 5nm process technology. The 2nd Gen RNGD AI platform comes in the form of a 180W PCIe-based design, which aims at LLM & Agentic AI workloads. The next-generation design is going to go all-in on the AI inference segment as Agentic AI continues to see […]

Read full article at https://wccftech.com/furiosaai-ditches-gpu-playbook-for-2nm-broadcom-built-inference-chip-claims-hbm4-e-bandwidth-beats-gpus/