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Today β€” 26 April 2026Main stream

Samsung Breaks the 10nm DRAM Barrier With New 4F Cell Structure That Boosts Density By Up to 50%

26 April 2026 at 16:20

pim memory 2

Samsung has reportedly produced the world's first "standalone" DRAM module that uses a process tech below 10nm. Samsung's New Sub-10nm DRAM Technology To Boost Densities & Uses New Materials For long, the DRAM industry has relied on a 10nm process technology for producing integrated circuits. 10nm DRAM technologies range from 1x, 1y, 1x, 1a, 1b, 1c, and 1d. Now, Samsung is working on a brand new 10a process technology for DRAM that goes below the official "10nm" process limit. Samsung Electronics has produced the world's first single-digit nanometer DRAM working die. It is reported that the company plans to rapidly […]

Read full article at https://wccftech.com/samsung-breaks-10nm-dram-barrier-new-4f-cell-structure-boosts-density/

3D X-DRAM Hits Proof-of-Concept, HBM-Replacement with 10x Density vs Traditional DRAM & High-Yield Memory Design

26 April 2026 at 11:50

3D X-DRAM Offers a 3D-NAND Like Architecture For Memory, Delivering Higher Memory Density, & Have Completed Proof-of-Concept Validation 1

Think of DRAM, but in a NAND-like structure, that's the basic concept of 3D X-DRAM, a revolution for the memory markets, bringing higher densities for AI. 3D X-DRAM Is Now Closer To Reality, An HBM-Replacement That Offers Higher Densities For AI In 2023, US-based NEO Semiconductor announced its brand new project called 3D X-DRAM, which was going to address the DRAM capacity bottleneck by leveraging a 3D NAND-like architecture. The company also unveiled two 3D X-DRAM cells, which will be integrated into memory solutions based on 3D X-DRAM. These include 1T1C and 3T0C DRAM cells, offering up to 512Gb, a […]

Read full article at https://wccftech.com/3d-x-dram-hits-proof-of-concept-hbm-replacement-10x-density-high-yield-memory/

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