Samsung just cracked a key mobile RAM problem
Samsung has almost solved a major problem with mobile RAM. The company and its SAIT arm have reportedly explored a technology to implement DRAM (mobile RAM) processes smaller than 10nm.
According to TheElec, Samsung and Samsung Advanced Institute of Technology have developed a technology, which will help its semiconductor division to advance the mobile RAM production process.
At the International Electron Devices Meeting in San Francisco, Samsung showcased “High Thermal Stability Amorphous Oxide Semiconductor Transistor for Sub-10nm Cell-on-Peri (CoP) Vertical Channel DRAM Transistors.”
The new Samsung DRAM tech features the Cell-on-Peri (CoP) method. It includes stacking the memory cells on top of the peripheral circuits (Peri).
Conventional solutions, which bring Peri transistors beneath memory cells, were prone to damage and performance degradation due to the high heat generated during the cell stacking process.
Samsung stated, “We demonstrated for the first time an amorphous InGaO-based high thermal stability Vertical Channel Transistor (VCT) with a 100nm channel length that can withstand up to 550 degrees,” and added that “this transistor enables integration into a monolithic CoP DRAM architecture.”
As demonstrated, the Korean tech giant has overcome this problem by using InGaO (amorphous Indium Gallium Oxide). Meanwhile, industry watchers believe that implementation will tech time as the tech is still under development.
An industry official commented, “This technology is still in the research phase, and its actual application in commercial Samsung DRAM is a long way off,” and added that “it will be applied to sub-10nm class 0Alpha or 0Beta DRAM.”
Image: Samsung Newsroom
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